NXP Semiconductors has introduced two new 20V, N-channel trench MOSFETs which are ideal for use in LED drivers and other types of power-switching circuits. The PMN16XNE and PMN30UNE are N-channel enhancement-mode trench MOSFETs housed in a small SOT457 (SC-74) surface-mount plastic package.
Rated for a maximum drain-source voltage of 20V, the PMN16XNE is easy to drive, featuring a maximum gate-source voltage of ±12V.
The MOSFET has an unusually high power-dissipation capability of 1.4W when mounted on an FR4 PCB, and provides more than 1kV of protection against electro-static discharge according to the human body model.
The PMN30UNE has a slightly lower power-dissipation capability than the PMN16XNE, at 1.24W. Its gate-source voltage is rated at a maximum ±8V. It offers the same level of protection against ESD strikes as the PMN16XNE.
- 6.9A maximum continuous drain current at an ambient temperature of 25°C
- 15mΩ on-resistance
- 12nC total gate charge
- 15K/W thermal resistance from junction to solder point
- Junction-temperature range: -55°C to 150°C
- LED drivers
- Power management
- Low-side load switches
- Switching circuits