Vishay Intertechnology has extended its 600V E series of power MOSFETs with new devices housed in its compact PowerPAK® 8mm x 8mm package, providing a space-saving alternative to conventional TO-220 and TO-263 solutions.
The new Vishay Siliconix SiHH2xxN60E parts feature a large drain terminal for low thermal resistance. In addition, the construction of the PowerPAK® 8×8 package allows one of the source pins to be arranged as a dedicated Kelvin source connection which separates the gate-drive return path from the main current-carrying source terminals.
This prevents the voltage drop in the high-current path attributable to gate loop inductance from reducing the gate-drive voltage applied to the MOSFET. This in turn leads to faster switching and better noise immunity in high-performance power-supply designs.
Based on Vishay’s latest energy-efficient E series superjunction technology, the SiHHxxN60E devices offer low on-resistance and gate charge. These values result in extremely low conduction and switching losses, helping reduce energy consumption in power factor correction circuits, flyback converters, and two-switch forward converters. They are designed to withstand high energy pulses in the avalanche and commutation modes.
|Part Number||Drain-source Voltage (V)||Gate-source Voltage (V)||Drain Current at 25˚ C (A)||Maximum On-resistance at 10V (Ω)||Typical Gate-charge at 10V (nC)||Typical Input Capacitance (pF)|
- 353mJ maximum pulse avalanche energy
- 0.48°C/W junction-to-case thermal resistance
- Junction-temperature range: -55°C to 150°C
- Server and telecoms power supplies
- HID and fluorescent lighting ballasts
- Power adaptors
- Motor drives
- Solar PV inverters
- Induction heating
- Welding equipment