The new Vishay SiHHxxN60E power MOSFETs all feature a large drain terminal for low thermal resistance, and a Kelvin source connection which can increase efficiency by improving the gate-drive signal. Their new low-profile, surface-mount PowerPAK package provides a space-saving alternative to conventional TO-220 and TO-263 devices.
The construction of the PowerPAK package allows one of the source pins to be configured as a dedicated Kelvin source connection, which separates the gate-drive return path from the main current-carrying source terminals. This prevents transient voltage drops in the high-current path from reducing the gate-drive voltage that is applied to the MOSFETs. This leads to faster switching and higher noise immunity, characteristics that are attractive to power-supply designs for telecoms, server, computing, lighting and industrial equipment.
Built on Vishay’s latest energy-efficient E series superjunction technology, the new SiHHxxN60E MOSFETs feature low onresistance and gate charge. This results in extremely low conduction and switching losses, and therefore to higher efficiency power
|Part Number||Drain-source Voltage (V)||Gate-source Voltage (V)||Drain Current at 25˚ C (A)||Maximum On-resistance at 10V (Ω)||Typical Gate-charge at 10V (nC)||Typical Input Capacitance (pF)|
- Low figure of merit
- Similar thermal performance to larger TO-263 package style
- Withstands high energy pulses in avalanche and commutation modes
- Power factor correction
- Flyback converters
- Two-switch forward converters