The PMCM4401VNE is a 12V N-channel enhancement-mode trench MOSFET housed in a miniature 4-bump chip-scale package. Its P-channel counterpart is the PMCM4401VPE.
The PMCM4401VxE’s tiny package, measuring just 0.78mm × 0.78mm × 0.35mm, is ideal for designers who need to realise a power system with high power density and a small board footprint. Despite the device’s small size, it is able to handle current of 6A in pulses lasting up to 5s, when operating at an ambient temperature of 25°C and a gate-source voltage of 4.5V.
Continuous current under the same conditions is rated at a maximum 4.7A.
Drain-source on-resistance is 36mΩ at a drain current of 3A and a junction temperature of 25°C.
- >2kV ESD protection on the human body model
- Operating temperature range: -55°C to 150°C
- 19A maximum peak drain current
- ±8V gate-source voltage
- Relay drivers
- High-speed line drivers
- Low-side load switches
- Switching circuits