ON Semiconductor has launched the NIV1161, an integrated blocking diode and power switch which protects high- speed data lines in vehicles from ESD strikes and short circuits.
The NIV1161’s low capacitance and low ESD clamping voltage make it ideal for protecting voltage-sensitive high-speed data lines in in-vehicle networks. The low capacitive loading of the signal lines minimises signal attenuation.
Housed in a 2mm x 2mm flat package, the device enables the board designer to route trace signals with minimal bending in order to maintain signal integrity. Close diode-capacitance matching between I/Os of 1% has the same beneficial effect.
The ESD protection provided by the NIV1161 is consistent with the provisions of the IEC 61000-4-2 level 4 standard. Low dynamic resistance enables the device to achieve very low clamping voltages. Further, the breakdown voltage of 16.5V allows the device to survive a short-to-battery condition, which can range between 9V and 16V.
The NIV1161’s series FETs have very low on-resistance to limit distortion on the signal lines. The threshold voltage of 1.0V allows operation at the low gate-drive voltages used by USB, LVDS and other low-level signals.
- AEC-Q101 qualified
- 0.65pF I/O-to-ground capacitance
- 26V maximum clamping voltage for a 1A pulse
- ±8kV ESD protection for contact discharges
- ±15kV ESD protection for air discharges
- Supports Production Part Approval Process (PPAP)
- Automotive high-speed signal pairs
- USB2.0 and USB3.0