The new Vishay Semiconductors VS-4FD devices offer a combination of very low forward voltages and a low reverse-recovery charge, resulting in low losses and high efficiency. In addition, their extremely soft turn-off behaviour keeps over-voltage events to a minimum under all switching conditions.
The new VS-4FD diodes complement Vishay’s recently introduced trench IGBTs, as well as the more advanced IGBTs from other suppliers. Together, the devices make it easy for the power system designer to achieve low EMI and high reliability in single- and three-phase inverters and in full and half-bridge DC-DC converters.
The VS-4FD series is available in both a ‘U’ and an ‘H’ designation. The U series diodes feature extremely low forward voltages of as little as 1.4V, enabling the designer to minimise conduction losses in medium-speed circuits. The H series diodes, which operate at higher speed, offer reverse-recovery times of as little as 25ns, with typical forward voltages down to 1.65V.
The fourth-generation diodes feature improved technologies in their active area and termination design, allowing for forward currents ranging from 12A to 250A in smaller die sizes than the previous generation of devices. Their reduced thickness improves thermal impedance.
|Part Number||Speed||Breakdown Voltage (V)||Forward Current (A)||Typical Forward Voltage (V)|
- High-frequency converters in power modules
- Motor drives
- Single- and three-phase inverters
- Full- and half-bridge DC-DC converters
- PFC circuits
- Secondary-side rectification
- Low reverse-recovery charge
- Ultra-soft recovery in any switching conditions
- Polyimide passivated chip for high reliability
- 175°C maximum operating temperature