Vishay Intertechnology has expanded its range of TMBS® Trench MOS Barrier Schottky rectifiers for solar bypass applications with the VSB2045Y-M3, a 45V device in a P600 axial-leaded package.
Designers who use it in equipment such as low-voltage, high-frequency inverters, and solar cell junction boxes, can achieve high power density. The rectifier acts as a bypass diode for the protection of photovoltaic solar cells.
The VSB2045y-M3 TMBS rectifier combines a high peak forward-surge capability of 250A with a low forward-voltage drop of as little as 0.3V, to minimise power losses. It can also handle a maximum junction temperature of 150°C.
The maximum average forward rectified current that the device can handle is 20A.
- Bypass diode in solar cell junction boxes
- High-efficiency operation
- ESD capability:
>8kV (human body model, contact mode),
>400V (machine model)
- UL 94 V-0 flammability rating