ST’s latest super-junction power MOSFETs answer the world’s need for more efficient power supplies in home electronics, low-energy lighting, and solar micro-inverters, while also offering greater robustness and the latest package options for increased power density.
These MDmesh M2-series devices are the new state of the art in super-junction technology, and achieve even lower on-resistance (RDS(ON)) than their predecessors, combined with lower gate charge (QGD) and input/output capacitances (Ciss/Coss). Together, these advances further reduce energy losses and heat dissipation, and allow faster and more efficient switching.
At the same time, the increased breakdown voltage of 650V — compared to 600V typical of other devices in the market — ensures a higher safety margin to enable more robust and reliable systems.
The new series also adds the option of a PowerFLAT 5×6 HV high-voltage surface-mount package offering greater thermal performance and current-handling capability within a small footprint and low profile. Scheduled for availability in Q1 2015, the PowerFLAT 5×6 HV option effectively increases power density, enabling next-generation designs in smaller enclosures to deliver high output power without compromising reliability.
The MDmesh M2 MOSFETs target power adapters for equipment like laptops, printers, and game consoles, as well as the internal power supplies of televisions and music systems. Drivers for 3W-25W single-string LED light engines, as well as multi-string light engines at higher power ratings, can also benefit from the increased thermal efficiency and performance. The PowerFLAT 5×6 HV option is a strong choice for solar micro-inverters, bringing the MDmesh M2 efficiency advantages to compact domestic and commercial modules.