Housed in a 5mm x 5mm, 31-pin PowerPAK® MLP package, the SiC620 and SiC620A modules are 30% smaller than the previous generation of integrated power stages from Vishay, which measure 6mm x 6mm. At the same time, the new devices offer peak efficiency of 95%, some 3% higher than the previous generation.
Compliant with the DrMOS 4.0 specification, the devices combine TrenchFET® Gen IV N-channel MOSFETs with an integrated driver IC and a bootstrap Schottky diode in a package which has a footprint of just 25mm2.
Capable of producing current higher than 60A per phase, the SiC620 family operates at switching frequencies as high as 1.5MHz. The integrated devices generate lower package parasitics than comparable discrete solutions. At the same time, the high switching frequency affords the designer the freedom to use small capacitors and inductors, resulting in high power density and low overall cost.
Offering excellent thermal performance, the new modules run some 50°C cooler than previous generations of VRPower power stages.
The devices’ gate driver IC is compatible with a wide range of PWM controllers. The SiC620 supports tri-state PWM logic of 5V, while the SIC620A is optimised for 3.3V PWM. The power stages’ driver IC incorporates zero-current detection circuitry to improve light-load efficiency, while an adaptive dead-time control helps to improve efficiency under all load conditions.
- High-current, non-isolated point-of-load modules
- High-power, multi-phase buck regulators
- Optimised for 12V input rails
- Input voltage range: 4.5V to 16V
- Under-voltage lock-out
- Shoot-through protection
- Over-temperature warning