The Vishay Si8851EDB is the industry’s first -20V P-channel Gen III MOSFET in the 2.4mm x 2.0mm MICRO FOOT® outline, combining advanced low-loss TrenchFET® technology with the spacesaving advantages of the MICRO FOOT packageless CSP.
The Si8851EDB is ideal for battery-switching or load-switching applications. Its on-state resistance of 8.0mΩ at 4.5V gate voltage is almost half that of the closest competing 2mm x 2mm MOSFET, which promotes efficient use of energy and delivers advantages such as longer battery run times. In addition, the Si8851EDB has a profile of only 0.4mm, whereas the conventional 2mm x 2mm package is 8mm high.
Compared to existing 3mm x 3mm x 0.8mm MOSFETs, the Si8851EDB has similar on-state resistance within a 56% smaller outline delivering at least 30% better on-state resistance per package size and 50% thinner profile.
In addition, with 6kV ESD protection built-in, the Si8851EDB is also able to prevent electrostatic discharges from damaging the internal circuitry of equipment such as handheld devices.
- 11.0mΩ on-resistance at 2.5V gate voltage
- 70nC gate charge
- -5A specified on-state drain current @ 25°C and 5V VDS
- 6kV (HBM) ESD protection
- 8V maximum gate-source voltage
- Battery switch
- Load switch
- Power-management applications