The new N-channel TrenchFET power MOSFET in a thermally enhanced PowerPAK® SO-8 package extends the company’s ThunderFET technology to 150V. The Vishay Siliconix SiR872ADP offers low on-resistance of 18mΩ at 10V and 23mΩ at 7.5V, while maintaining low gate charge, 31nC typical at 10V and 22.8nC typical at 7.5V.
The device recently released is optimized for primary side switching and secondary side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro inverters, and brushless DC motors. In these applications, the SiR872ADP offers 45% lower on-resistance than previous generation devices to reduce conduction losses and improve total system efficiency.
The SiR872ADP provides a low on-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in DC/DC converter applications of 464mΩ-nC at 10V and 429mΩ-nC at 7.5V. The device’s FOM reduces conduction and switching losses to improve total system efficiency. By providing higher performance than multiple previous generation devices, the MOSFET can potentially reduce overall component count and simplify designs.
The SiR872ADP is 100% Rg and UIS tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS directive 2011/65/EU.
• Fixed telecom
• DC/DC converter
• Primary and secondary side switch
• Solar micro inverter
• TrenchFET power MOSFET
• 100% Rg and UIS tested